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| insulated gate bipolar transistor with ultrafast soft recovery diode AUIRGPS4067D1 1 www.irf.com 09/27/2012 v ces = 600v i c = 160a, t c = 100c t sc ?? 6 s, t j(max) = 175c v ce(on) typ. = 1.70v features ? low v ce (on) trench igbt technology ? low switching losses ? 6 s scsoa ? square rbsoa ? 100% of the parts tested for i lm ? positive v ce (on) temperature coefficient ? soft recovery co-pak diode ? lead-free, rohs compliant ? automotive qualified * benefits ? high efficiency in a wide range of applications ? suitable for applications in the low to mid-rrange frequencies ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi * qualification standards can be found at http://www.irf.com/ g c e gate collector emitter super-247 AUIRGPS4067D1 g c e c e g n-channel c absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not impl ied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipat ion ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 240 i c @ t c = 100c continuous collector current 160 i nominal nominal current 120 i cm pulse collector current, v ge = 15v 360 i lm clamped inductive load current, v ge = 20v 480 a i f nominal diode nominal current 120 i fm diode maximum forward current 480 v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 750 w p d @ t c = 100c maximum power dissipation 375 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) thermal resistance parameter min. typ. max. units r ? jc (igbt) thermal resistance junction-to-case-(each igbt) ??? ??? 0.20 r ? ??? ??? 0.44 c/w r ? ? ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ??? pd - 97726c AUIRGPS4067D1 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 20v, l = 0.87 h, r g = 50 ??? tested in production i lm ?? 400a. pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. r ? is measured at t j of approximately 90c. calculated continuous current based on maximum allowable junction temperature. package igbt current limit is 195a. package diod e current limit is120a. note that current limitations arising from heating of the device leads may occur. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter b reakdow n vol t age 600 ? ? v v ge = 0v, i c = 500 a ? v (b r )ce s / ? t j t emper atur e coef f . of b r eak down vol tage ?0.27?v/cv ge = 0v, i c = 15ma (25c-175c) ?1.702.05 i c = 120a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 2.15 ? v i c = 120a, v ge = 15v, t j = 150c ?2.20? i c = 120a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 5.6ma ? v ge ( t h ) / ? tj threshold voltage temp. coefficient ? -17 ? mv/c v ce = v ge , i c = 20ma (25c - 175c) gfe forward transconductance ? 85 ? s v ce = 50v, i c = 120a i ces collector-to-emitter leakage current ? 2.3 200 av ge = 0v, v ce = 600v ?9.4?mav ge = 0v, v ce = 600v, t j = 175c ?1.92.2 i f = 120a ?2.0? i f = 120a, t j = 175c i ge s gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 240 360 i c = 120a q ge gate-to-emitter charge (turn-on) ? 69 104 nc v ge = 15v q gc gate-to-collector charge (turn-on) ? 90 135 v cc = 400v e on turn-on switching loss ? 8.2 10 i c = 120a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 2.9 3.2 mj r g = 4.7 ? , l = 87 h, t j = 25c e total total switching loss ? 11.1 13.2 e ner gy l o s s es i ncl ude t ai l & di ode r ev er s e r eco ver y t d(on) turn-on delay time ? 69 82 i c = 120a, v cc = 400v, v ge = 15v t r rise time ? 65 82 ns r g = 4.7 ? , l = 87 h, t j = 25c t d(off) turn-off delay time ? 198 230 t f fall time ? 38 48 e on turn-on switching loss ? 10 ? i c = 120a, v cc = 400v, v ge =15v e off turn-off switching loss ? 3.8 ? mj r g = 4.7 ? , l = 87 h, t j = 175c e total total switching loss ? 13.8 ? e ner gy l o s s es i ncl ude t ai l & di ode r ev er s e r eco ver y t d(on) turn-on delay time ? 63 ? i c = 120a, v cc = 400v, v ge = 15v t r rise time ? 64 ? ns r g = 4.7 ? , l = 200 h t d(off) turn-off delay time ? 230 ? t j = 175c t f fall time ? 51 ? c ies input capacitance ? 7780 ? pf v ge = 0v c oes output capacitance ? 505 ? v cc = 30v c res reverse transfer capacitance ? 245 ? f = 1.0mhz t j = 175c, i c = 480a rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v rg = 4.7 ? , v ge = +20v to 0v scsoa short circuit safe operating area 6 ? ? sv cc = 400v, vp =600v rg = 1.0 ? , v ge = +15v to 0v erec reverse recovery energy of the diode ? 2440 ? jt j = 175c t rr diode reverse recovery time ? 360 ? ns v cc = 400v, i f = 120a i rr peak reverse recovery current ? 53 ? a v ge = 15v, rg = 4.7 ? , l =87 h conditions diode forward voltage drop v fm v AUIRGPS4067D1 www.irf.com 3 qualification information ? moisture sensitivity level super-247 n/a charged device model class c5 (+/- 1000v) ?? aec-q101-005 qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. rohs compliant yes esd machine model class m4 (+/- 400v) ?? aec-q101-002 human body model class h3b (+/- 8000v) ?? aec-q101-001 AUIRGPS4067D1 4 www.irf.com fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c, t j ?? 175c; v ge =15v fig. 4 - reverse bias soa t j = 175c; v ge =20v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 30 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 30 s 10 100 1000 v ce (v) 1 10 100 1000 i c a ) 0 1 2 3 4 5 6 7 8 9 10 v ce (v) 0 60 120 180 240 300 360 420 480 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 1 2 3 4 5 6 7 8 9 10 v ce (v) 0 60 120 180 240 300 360 420 480 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 1msec 10 sec 100 sec tc = 25c tj = 175c single pulse dc 0 20 40 60 80 100 120 140 160 180 t c (c) 0 100 200 300 400 500 600 700 800 p t o t ( w ) 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 i c ( a ) AUIRGPS4067D1 www.irf.com 5 fig. 7 - typ. igbt output characteristics t j = 175c; tp = 30 s fig. 8 - typ. diode forward characteristics tp = 30 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 175c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10 s fig. 9 - typical v ce vs. v ge t j = -40c 0 1 2 3 4 5 6 7 8 9 10 v ce (v) 0 60 120 180 240 300 360 420 480 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 1.0 2.0 3.0 4.0 5.0 v f (v) 0 60 120 180 240 300 360 420 480 i f ( a ) t j = -40c t j = 25c t j =175c 0246810121416 v ge, gate-to-emitter voltage (v) 0 60 120 180 240 300 360 420 480 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = -40c t j = 25c t j = 175c 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 60a i ce = 120a i ce = 195a 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 60a i ce = 120a i ce = 195a 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 60a i ce = 120a i ce = 195a AUIRGPS4067D1 6 www.irf.com fig. 13 - typ. energy loss vs. i c t j = 175c; l = 0.087mh; v ce = 400v, r g = 5.0 ? ; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l = 0.087mh; v ce = 400v, r g = 5.0 ? ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 175c; l = 0.087mh; v ce = 400v, i ce = 120a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l = 0.087mh; v ce = 400v, i ce = 120a; v ge = 15v fig. 17 - typ. diode i rr vs. i f t j = 175c fig. 18 - typ. diode i rr vs. r g t j = 175c 0 50 100 150 200 250 i c (a) 0 5000 10000 15000 20000 25000 30000 35000 e n e r g y ( j ) e off e on 0 50 100 150 200 250 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 120 r g ( ? ) 0 5000 10000 15000 20000 25000 30000 35000 e n e r g y ( j ) e off e on 0 25 50 75 100 r g ( ? ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 50 100 150 200 250 i f (a) 30 35 40 45 50 55 60 i r r ( a ) r g = 10 ? r g = 2 ?? r g = 4.7 ? r g = 50 ? 0 10 20 30 40 50 60 r g ( ?? 36 38 40 42 44 46 48 50 52 i r r ( a ) AUIRGPS4067D1 www.irf.com 7 fig. 19 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 120a; t j = 175c fig. 20 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 24 - typical gate charge vs. v ge i ce = 120a fig. 21 - typ. diode e rr vs. i f t j = 175c fig. 22 - v ge vs. short circuit time v cc = 400v; t c = 25c 200 400 600 800 1000 1200 1400 di f /dt (a/ s) 30 35 40 45 50 55 60 i r r ( a ) 200 400 600 800 1000 1200 1400 1600 di f /dt (a/ s) 5000 10000 15000 20000 25000 30000 35000 q r r ( n c ) 10 ? 2 ?? 50 ? 4.7 ? 120a 240a 60a 0 50 100 150 200 250 300 350 i f (a) 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 e n e r g y ( j ) r g = 10 ? r g = 20 ? r g = 4.7 ? r g = 50 ? 8 1012141618 v ge (v) 4 6 8 10 12 14 16 18 t i m e ( s ) 200 300 400 500 600 700 800 900 c u r r e n t ( a ) t sc i sc 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 100000 c a p a c i t a n c e ( p f ) cies coes cres 0 50 100 150 200 250 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v AUIRGPS4067D1 8 www.irf.com fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ?? i (sec) 0.0564 0.000253 0.0888 0.003155 0.0547 0.014893 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ? ? c ci i ? ri ci= ? i ? ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i ? ri ci= ? i ? ri ? ? c ? 4 ? 4 r 4 r 4 ri (c/w) ?? i (sec) 0.00597 0.000016 0.14039 0.000387 0.19117 0.004096 0.10156 0.021245 AUIRGPS4067D1 www.irf.com 9 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm g force c sens e 100k dut 0.0075 f d1 22k e force c force e sense fig.c.t.6 - bvces filter circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v dc 4x dut vcc r sh AUIRGPS4067D1 10 www.irf.com fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -100 0 100 200 300 400 500 600 -50e-8 00e+0 50e-8 1e-6 2e-6 time(s) v ce (v) -30 0 30 60 90 120 150 180 i ce (a) v ce i ce -100 0 100 200 300 400 500 600 -5e-7 0e+0 5e-7 1e-6 2e-6 time (s) v ce (v) -30 0 30 60 90 120 150 180 i ce (a) v ce i ce -80 -40 0 40 80 120 160 -5.0e-7 0.0e+0 5.0e-7 1.0e-6 time (ns) i f (a) -100 0 100 200 300 400 500 600 700 800 -5.0e-6 0.0e+0 5.0e-6 1.0e-5 1.5e-5 time (s) vce (v) -100 0 100 200 300 400 500 600 700 800 ice (a) v ce i ce AUIRGPS4067D1 www.irf.com 11 super-247 (to-274aa) part marking information ! ""!" #"# $!$ % &'( ) *% ' ' case outline and dimensions ? super-247 AUIRGPS4067D1 12 www.irf.com ordering information base part number package type standard pack complete part number form quantity AUIRGPS4067D1 super-247 tube 25 AUIRGPS4067D1 AUIRGPS4067D1 www.irf.com 13 ! "#$ % & ' # ( ) ) * ' ' % +% ' * , ' ( % , ( -. , . % ( , / 0 1 # 01# -0 0 01# ' . 01# 2 ' . ) ' -/&*- 34565 ' "#$ . 2 ' ( & + $ ,, %, - , ! "# |
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